- Creative Innovation
- IoT 시스템반도체 융합 인력 육성 센터
교수진
- 신창환 | 실리콘 반도체 소자 및 메모리 기술
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- 학력 Education
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- University of California, Berkeley, 2011
Doctor of Philosophy, Electrical Engineering and Computer Sciences
- Korea University, 2006
Bachelor of Science, School of Electrical Engineering
- 약력/경력 Experience
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- Sungkyunkwan University, Korea, 2018 - present
Associate Professor
- SK hynix, Korea, 2017 - present
Independent Director
- University of Seoul, Korea, 2012 - 2018
Associate Professor
- Xilinx, USA, 2011 - 2012
Senior Engineer
- IBM Coporation, USA, 2010
Device Modeling Professional at 22 nm SOI device team
- Motorola, Korea, 2005 - 2006
Intern in H/W design team
- 관심분야 Research Interest
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- 논문 Journal Article
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- Machine Learning (ML)-based model to characterize the line edge roughness (LER)-induced random variation in FinFET
- Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs
- MFMIS Negative Capacitance FinFET Design for Improving Drive Current
- Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor Electrical
- Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials
- Device Design Guideline for HfO2-Based Ferroelectric-Gated Nanoelectromechanical System
- Experimental study of interface traps in MOS capacitor with Al-doped HfO2
- Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate
- Device-design optimization of ferroelectric-gated vertical tunnel fieldeffect transistor to suppress ambipolar current
- Optimization of double metal-gate InAs/Si heterojunction nanowire TFET
- Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications
- Understanding of Feedback Field-Effect Transistor and Its pplications
- 연구실이름 laboratory name
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